
Journals
1. M. Chan, C. M. Tan, K. C. Lee, C. S. Tan, “Nondestructive degradation study of copper wire bond for its temperature cycling reliability evaluation, “ Microelectronics Reliability, Vol. 61, pp. 5663, June, 2016. 2. Yizhen Tian*, Feifei He, QiJun Zhang, Cher Ming Tan, Jianguo Ma, “Rapid ULSI Interconnect Reliability Analysis Using Neural Networks,” IEEE Trans. On Devices and Materials Reliability, vol. 14, issue 1, pp. 400407, March, 2014. 3. K. Ghosh*, J. Zhang, L. Zhang, Y. Dong, H. Li, C. M. Tan, G. Xia, and C. S. Tan, “Integration of Lowk Dielectric Liner in Through Silicon Via and Thermomechanical Stress Relief,” Applied Physics Express, vol. 5(12), pp. 1266013, December, 2012. 4. Y. D. Han*, H. Y. Jing, S. M. L. Nai, L. Y. Xu, C. M. Tan, and J. Wei, “Creep mitigation in SnAgCu composite solder with Nicoated carbon nanotubes,” Journal of Materials Science: Materials in Electronics, vol. 23, no. 5, pp. 11081115, May, 2012. 5. Y. D. Han*, H. Y. Jing, S. M. L. Nai, L. Y. Xu, C. M. Tan, and J. Wei, “Effect of NiCoated Carbon Nanotubes on Interfacial Reaction and Shear Strength of SnAgCu Solder Joints,” Journal of Electronic Materials, vol. 41, no. 9, pp. 247886, September, 2012. 6. Y.D. Han*, H.Y. Jing, S.M.L. Nai, L.Y. Xu, C.M. Tan, J. Wei, “Interfacial reaction and shear strength of Nicoated carbon nanotubes refinforced SnAgCu solder joints during thermal cycling”, Intermetallics, vol. 31, pp. 7278, 2012. 7. C. M. Tan*, W. Li, and Z. Gan., “Applications of Finite element Methods for Reliability Study of ULSI Interconnections,” Microelectronics Reliability, vol. 52, no. 8, pp. 15391545, August, 2012. 8. Y. D. Han*, S. M. L. Nai, H. Y. Jing, L. Y. Xu, C. M. Tan, and J. Wei, “Development of a SnAgCu solder reinforced with Nicoated carbon nanotubes,” Journal of Materials Science: Materials in Electronics, vol. 22, pp. 315322, 2011. 9. Y. C. Tan, C. M. Tan, X. W. Zhang, T. C. Chai, and D. Q. Yu, “Electromigration performance of through silicon via (TSV)  A modeling approach,” Microelectronics Reliability, vol. 50, no. 9, pp. 13361340, 2010. 10. Y. C. Tan, C. M. Tan, and T. C. Ng, “Addressing the challenges in solder resistance measurement for electromigration test,” Microelectronics Reliability, vol. 50, pp. 13521354, 2010. 11. C. M. Fu, C. M. Tan, S. H. Wu, and H. B. Yao, “Width dependence of the effectiveness of reservoir length in improving electromigration for Cu/lowK interconnects,” Microelectronics Reliability, vol. 50, pp. 13321335, 2010. 12. Y. D. Han, H. Y. Jing, S. M. L. Nai, L. Y. Xu, C. M. Tan, and J. Wei., 2010, “Indentation size effect on the creep behavior of a SnAgCu solder,” International Journal of Modern Physics B, vol. 24, no. 12, pp. 267275. 13. Y.D. Han*, H.Y. Jing, S.M.L. Nai, L.Y. Xu, C.M. Tan, J. Wei, 2010, February, “Temperature Dependence of Creep and Hardness of SnAgCu LeadFree Solder,” Journal of Electronic Materials, v 39, n 2, p 223229. 14. S. Z. Y. Loo, P. C. Lee, Z. X. Lim, N. Yantara, T. Y. Tee, C. M. Tan, and Z. Chen., 2010, “Interface fracture toughness assessment of solder joints using double cantilever beam test,” International Journal of Modern Physics B, vol. 24, no. 12, pp. 164174. 15. Y. D. Han, H. Y. Jing, S. M. L. Nai, L. Y. Xu, C. M. Tan, and J. Wei, 2009, “Nanomechanical properties of a SnAgCu solder reinforced with Nicoated carbon nanotubes,” International Journal of Nanoscience, vol. 9, no. 4, pp. 283287. 16. Y. D. Han, H. Y. Jing, S. M. L. Nai, L. Y. Xu, C. M. Tan, J. Wei, L.Y. Xu, S.R. Zhang, 2009, ”A modified constitutive model for creep of Sn3.5Ag0.7Cu solder joints,” Journal of Physics D: Applied Physics, v 42, n 12. 17. J. G. Ma, M. Yao, and C. M. Tan. “Review of electromigration modeling of IC Interconnects,” Journal of the University of Electronic Science and Technology of China, vol. 38, no. 5, pp. 495504, 2009. 18. A. Roy, Y. Hou, and C. M. Tan. “Electromigration in width transition copper interconnect,” Microelectronics Reliability, vol. 49, pp. 10861089, 2009. 19. Y. Hou and C. M. Tan. “Comparison of stressinduced voiding phenomena in copper linevia structures with different dielectric materials,” Semiconductor Science and Technology, vol. 24, pp. 8501485022, 2009. 20. W. Li, C. M. Tan, and N. Raghavan. “Dynamic simulation of void nucleation during electromigration in narrow integrated circuit interconnects,” Journal of Applied Physics, vol. 105, no. 1, pp. 014305, 2009. 21. C. M. Tan and N. Raghavan. “A bimodal 3parameter lognormal mixture distribution for electromigration failures,” Thin Solid Films, vol. 516, pp. 88048809, 2008. 22. A. Roy and C. M. Tan. “Very high current density package level electromigration test for copper interconnects,” Journal of Applied Physics, vol. 103, no. 9, 2008. 23. Y. Hou and C. M. Tan. “Stressinduced voiding study in integrated circuit interconnects,” Semiconductor Science and Technology, vol.23, 2008. 24. A. Roy and C. M. Tan. “Probing into the asymmetric nature of electromigration performance of submicron interconnect via structure,” Thin Solid Films, vol. 515, no. 78, pp. 38673874, 2007. 25. W. Li, C. M. Tan, and Y. Hou. “Dynamic simulation of electromigration in polycrystalline interconnect thin film using combined Monte Carlo algorithm and finite element modeling,” Journal of Applied Physics, vol. 101, no. 10, pp. 104314, 2007. 26. W. Li and C. M. Tan. “Enhanced Finite Element Modelling of Cu Electromigration using ANSYS and Matlab,” Microelectronics Reliability, vol. 47, no. 911, pp. 14971501, 2007. 27. C. M. Tan and Y. Hou. “Lifetime modeling for stressinduced voiding in integrated circuit interconnections,” Applied Physics Letters, vol. 91, no. 6, pp. 061904, 2007. 28. C. M. Tan, N. Raghavan, and A. Roy. “Application of Gamma Distribution in Electromigration for Submicron Interconnects,” Journal of Applied Physics, vol. 102, no. 10, pp. 103703, 2007. 29. C. M. Tan and A. Roy. “Electromigration in ULSI Interconnects,” Materials Science & Engineering R Reports, vol. 58, no. 12, pp. 175, 2007. 30. C. M. Tan and Y. Hou. “Revisit to the finite element modeling of electromigration for narrow interconnects,” Journal of Applied Physics, vol. 102, no. 3, pp. 33705, 2007. 31. C. M. Tan and A. Roy. “Investigation of the effect of temperature and stress gradients on accelerated EM test for Cu narrow interconnects,” Thin Solid Films, vol. 504, no. 12, pp. 288293, 2006. 32. C. M. Tan, W. Li, K. T. Tan, and F. Low. “Development of highly accelerated electromigration test,” Microelectronics Reliability, vol. 46, no. 911, pp. 16381642, 2006. 33. A. Roy, R. Kumar, C. M. Tan, T. Wong, and C. H. Tung. “Electromigration in damascene copper interconnects of line width down to 100 nm,” Semiconductor Science and Technology, vol. 21, pp. 1369, 2006. 34. A. Roy and C. M. Tan. “Experimental investigation on the impact of stress free temperature on the electromigration performance of copper dual damascene submicron interconnect,” Microelectronics Reliability, vol. 46, no. 911, pp. 16521656, 2006. 35. C. M. Tan, A. Roy, A. V. Vairagar, A. Krishnamoorthy, and S. G. Mhaisalkar. “Current crowding effect on copper dual damascene via bottom failure for ULSI applications,” IEEE Trans. on Device and Materials Reliability, vol. 5, no. 2, pp. 198, 2005. 36. A. Roy, C. M. Tan, R. Kumar, and X. T. Chen. “Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron interconnect linevia test structures,” Microelectronics Reliability, vol. 45, no. 911, pp. 14431448, 2005. 37. C. M. Tan, A. Roy, K. T. Tan, D. Sim, K. Ye, and F. Low. “Effect of vacuum break after the barrier layer deposition on the electromigration performance of aluminum based line interconnects,” Microelectronics Reliability, vol. 45, no. 911, pp. 14491454, 2005. 38. C. M. Tan and G. Zhang. “Overcoming intrinsic weakness of ULSI metallization electromigration performances,” Thin Solid Films, vol. 462463, pp. 263268, 2004. 39. Z. L. Yuan, D. H. Zhang, C. Y. Li, K. Prasad, and C. M. Tan. “Study of Interactions between aTa films and SiO2 under rapid thermal annealing,” Thin Solid Films, vol. 462463, pp. 279, 2004. 40. Z. L. Yuan, D. H. Zhang, C. Y. Li, J. Sudijono, and C. M. Tan. “Thermal Stability of Cu/aTa/SiO2/Si structures,” Thin Solid Films, vol. 462463, pp. 284, 2004. 41. Z. W. Yang, D. H. Zhang, C. Y. Li, C. M. Tan, and K. Prasad. “Barrier layer effects on reliabilities of copper metallization,” Thin Solid Films, vol. 462463, pp. 288, 2004. 42. C. M. Tan, G. Zhang, and Z. Gan. “Dynamics Study of the physical processes in the Intrinsic line electromigration of deepsubmicron copper and aluminum interconnects,” IEEE Transactions on Device and Materials Reliability, vol. 4, no. 3, pp. 450456, 2004. 43. C. M. Tan and Z. Gan. “Failure mechanisms of aluminum bond pad peeling during thermosonic bonding,” IEEE Transactions on Device and Materials Reliability, vol. 3, no. 2, pp. 4450, 2003. 44. Z. L. Yuan, D. H. Zhang, C. Y. Li, K. Prasad, L. J. Tang, and C. M. Tan. “A new method for deposition of cubic Ta diffusion barrier for Cu metallization,” Thin Solid Films, vol. 434, no. 12, pp. 126129, 2003. 45. C. M. Tan and S. Y. Lim. “Application of wignerville distribution in electromigration noise analysis,” IEEE Transactions on Device and Materials Reliability, vol. 2, no. 2, pp. 3035, 2002. 46. C. M. Tan. “Effect of BOE etching time on wire bonding quality,” IEEE Transactions on Components and Packaging Technologies, vol. 22, no. 4, pp. 551557, 1999.
1. Udit Narula, Cher Ming Tan, Chao Sung Lai. “Growth Mechanism for Low Temperature PVD Graphene Synthesis on Copper Using Amorphous Carbon,” Scientific Reports, vol. 7, no. 44112, pp113, March 2017. 2. U. Narula, C. M. Tan, "Engineering a PVD Based Graphene Synthesis Method," IEEE Transactions on Nanotechnology , vol. PP, no. 99, pp.17, February, 2017. 3. Udit Narula and Cher Ming Tan, “Determining the Parameters of Importance of a Graphene Synthesis Process Using DesignofExperiments Method,” Applied Sciences, Vol. 6, 204, pp116, July 2016. 4. U. Narula, C. M. Tan, C. S. Lai, “Copper induced synthesis of graphene using amorphous carbon,” Microelectronics Reliability, Vol. 61, pp8790, June 2016. 5. C. M. Tan, C. Baudot, Y. D. Han, and H. Jing. “Applications of multiwalled carbon nanotube in electronic packaging,” Nanoscale Research Letters, vol. 7, pp. 17, 2012. 6. J. H. Zhao, C. M. Tan, K. T. Beng, and S. A. F. Peel. “Effect of hydrophilicity of carbon nanotube arrays on the release rate and activity of recombinant human bone morphogenetic protein2,” Nanotechnology, vol. 22, no. 29, pp. 295712, 22nd Jul. 2011. 7. C. Baudot and C. M. Tan. “Covalent functionalization of carbon nanotubes and their use in dielectric epoxy composites to improve heat dissipation,” Carbon, vol. 49, no. 7, pp. 23622369, 2011. 8. C. Baudot, C. M. Tan, and J. C. Kong. “FTIR spectroscopy as a tool for nanomaterial characterization,” Infrared Physics & Technology, vol. 53, no. 6, pp. 4348, Nov. 2010. 9. S. Li, A. K. Ng, J. W. Rong, C. M. Tan, Y, Yang, and Y Chen. “Antibacterial action of dispersed singlewalled carbon nanotubes on Escherichia coli and Bacillus subtilis investigated by atomic force microscopy,” Nanoscale, vol. 2, no. 12, pp. 274450, Nov. 2010. 10. Z. Han, B. Tay, C. M. Tan, M. Shakerzadeh, and K. Ostrikov. “Electrowetting control of cassietowenzel transitions in superhydrophobic carbon nanotubebased nanocomposites,” ACS Nano, vol. 3, pp. 30313036, 2009. 11. C. Baudot and C. M. Tan. “Solubility, dispersion and bonding of functionalised carbon nanotubes in epoxy resins,” International Journal of Nanotechnology, vol. 6. No. 78, pp. 618627, 2009. 12. M. Gu, C. Q. Sun, C. M. Tan, and S. Wang. “Local bond average for the size and temperature dependence of elastic and vibronic properties of nanostructures,” International Journal of Nanotechnology, vol. 6, no. 78, pp. 640652, 2009. 13. A. Roy, C. M. Tan, S. OShea, H. Kedar, and W. Hofbauer. “Room temperature observation of point defect on gold surface using thermovoltage mapping,” Microelectronics Reliability, vol. 47, no. 911, pp. 15801584, 2007. 14. T. Xu, Z. Wang, J. Miao, X. Chen, and C. M. Tan. “Aligned carbon nanotubes for throughwafer interconnects,” Applied Physics Letters, vol. 91, no. 4, pp. 042108, 2007. 15. M. X. Gu, C. Q. Sun, Z. Chen, T. C. A. Yeung, S. Li, C. M. Tan, and V. Nosik. “Size, temperature and bond nature dependence of elasticity and its derivatives on extensibility, debye temperature, and heat capacity of nanostructures,” Physical Review B, vol. 75, no. 12, pp. 125403, 2007. 16. M. X. Gu, T. C. A. Yeung, V. Nosik, and C. M. Tan. “Change in thermal conductivity of cylindrical silicon nanowires induced by surface bonding modification,” Journal of Applied Physics, vol. 100, pp. 94304, 2006. 17. C. M. Tan, J. J. Jia, and W. Yu. “Temperature dependence of the field emission of multiwalled carbon nanotubes,” Applied Physics Letters, vol. 86, no. 26, pp. 263104, 2005. 18. C. M. Tan, J. M. Xu, and S. Zukotynski. “Electronic properties of nini doping superlattices,” Journal of Applied Physics, vol. 73, no. 6, pp. 2921, 1992. 19. C. M. Tan and J. Xu. “Assessment of the performance potential of a quantum resonant tunneling structure under current density constraint,” International Journal of Electronics, vol. 70, no. 4, pp. 703712, 1991. 20. C. M. Tan, J. Xu, and S. Zukotynski. “Study of resonant tunneling structures: a hybrid incremental airy function plane wave approach,” Journal of Applied Physics, vol. 67, no. 6, pp. 30113017, 1990.
1. Xiangchen Chen and Cher Ming Tan, “Modeling and analysis of gateallaround silicon nanowire FET,” Microelectronics Reliability, Volume 54, Issues 6–7, Pages 1103–1108, June–July 2014. 2. Cher Ming Tan and Xiangchen Chen, “Degradation mechanisms in gateallaround silicon Nanowire field effect transistor under electrostatic discharge stress – a modeling approach,” Nano convergence, vol 1 (1), 2014. 3. Asenov A, Schlichtmann U.M. Cher Ming Tan, Hei Wong and Zhou Xing, “ICMAT 2011 – Reliability and variability of semiconductor devices and ICs”, Microelectronics Reliability, v 52(8), p. 1531, 2012 4. C. M. Tan and G. Huang. “Comparison of SOI and PSOI LDMOS using electricalthermalstress coupled field modeling,” IEEE Transactions on Electron Devices, vol. 58, no. 10, pp. 3494500, Oct. 2011. 5. G. Huang and C. M. Tan. “Electricalthermalstress coupledfield effect in SOI and partial SOI lateral power diode,” IEEE Transactions on Power Electronics, vol. 26, no. 6, pp. 17231732, 2011. 6. J. Liao, C. M. Tan and G. Spierings. “Hot carrier reliability of power SOI EDNMOS,” IEEE Transactions on Power Electronics, vol. 25, no. 7, pp. 168591, 2010. 7. J. Liao, C. M. Tan and G. Spierings. “Behavior of hot carrier generation in power SOI LDNMOS with shallow trench isolation (STI),” Microelectronics Reliability, vol. 49, pp. 10381043, 2009. 8. C. M. Tan and N. Raghavan. “An approach to statistical analysis of gate oxide breakdown mechanisms,” Microelectronics Reliability, vol. 47, no. 911, pp. 13361342, 2007. 9. C. M. Tan and G. Huang. “Reverse breakdown voltage measurement for power P+NN+ rectifier,” Journal of Electronic TestingTheory and Applications, vol. 24, no. 5, pp. 473479, 2007. 10. G. Huang and C. M. Tan. “Device level electricalthermalstress coupledfield modeling,” Microelectronics Reliability, vol. 46, no. 911, pp. 18231827, 2006. 11. C. M. Tan, Z. Gan, W. F. Ho, S. Chen, and R. Liu. “Determination of the dice forward IV characteristics of a power diode from a packaged device and its applications,” Microelectronics Reliability, vol. 45, no. 1, pp. 179184, 2005. 12. C. M. Tan, J. Chiu, R. Liu, and G. Zhang. “Reliability screening through electrical testing for pressfit alternator power diode in automotive application,” Microelectronics Reliability, vol. 45, no. 911, pp. 17231727, 2005. 13. Z. Gan and C. M. Tan. “Thermally induced stress in partial SOI structure during high temperature processing,” Microelectronic Engineering, vol. 71, no. 2, pp. 150162, 2004. 14. C. M. Tan, Z. Gan, and X. Gao. “Temperature and stress distribution in the SOI structure during fabrication,” IEEE Transactions on Semiconductor Manufacturing, vol. 16, no. 2, pp. 314318, 2003. 15. C. M. Tan and K. J. Tseng. “Using power diode models for circuit simulations  a comprehensive review,” IEEE Transactions on Industrial Electronics, vol. 46, no. 3, pp. 637645, 1999.
Predictive Maintenance/ Prognosis and Health Mgt 1. M.D. Le and C.M. Tan, “Maintenance Scheduling of Plasma Etching Chamber in Wafer Fabrication for high yield etching process”, IEEE Trans. On Semiconductor Manufacturing, vol. 27, no. 2, pp. 204211, May 2014. 2. M. D. Le and C. M. Tan. “Optimal maintenance strategy of deteriorating system under imperfect maintenance & inspection using mixed inspection scheduling,” Reliability Engineering & System Safety, V. 113(1), p. 2129, Jan. 2013. 3. C. M. Tan. “Recent developments in engineering system maintenance,” The Singapore Engineer Magazine, Dec. 2012. 4. C. M. Tan and N. Raghavan. “Reply to comments on "A framework to practical predictive maintenance modeling for multistate systems,” Reliability Engineering & System Safety, vol. 94, no. 3, pp. 781782, 2009. 5. C. M. Tan and N. Raghavan. “A framework to Practical Predictive Maintenance Modeling for MultiState Systems,” Reliability Engineering & System Safety, vol. 93, pp. 1138, 2008. 6. C. M. Tan and N. Raghavan. “Root cause analysis based maintenance policy,” International Journal of Quality and Reliability Management, 24(2), 203228, 2007.
1. C. M. Tan, W. Yu, and W. Jun. “Comparison of mediumvacuum and plasmaactivated lowtemperature wafer bonding,” Applied Physics Letters, vol. 88, no. 11, pp. 114102, 2006. 2. C. M. Tan, S. Deng, J. Wei, W. B. Yu, S. M. L. Nai, and H. Xie. “Low temperature solgel intermediate layer wafer bonding,” Thin Solid Films, vol. 496, no.2, pp. 560, 2006. 3. C. M. Tan, S. Deng, J. Wei, and W. B. Yu. “Mechanism of solgel intermediate layer low temperature wafer bonding,” Journal of Physics DApplied Physics, vol. 38, no. 8, pp. 13081312, 2005. 4. W. B. Yu, C. M. Tan, J. Wei, S. S. Deng, and G. Huang. “Effect of medium vacuum on low temperature wafer bonding,” Journal of Micromechanics and Microengineering, vol. 15, no. 5, pp. 1001, 2005. 5. W. B. Yu, J. Wei, and C. M. Tan. “Mathematical model for lowtemperature wafer bonding under medium vacuum and its application,” IEEE Transactions on Advanced Packaging, vol. 28, no. 4, pp. 650658, 2005. 6. W. B. Yu, C. M. Tan, J. Wei, S. S. Deng, and S. M. L. Nai. “Influence of applied load on vacuum wafer bonding at low temperature,” Sensors and Actuators APhysical, vol. 115, no. 1, pp. 6772, 2004. 7. S. S. Deng, J. Wei, C. M. Tan, S. M. L. Nai, W. B. Yu, and H. Xie. “Low temperature silicon wafer bonding by solgel processing,” International Journal of Computational Engineering Science, vol. 4, no. 3, pp. 655658, 2003.
Integrated Circuit Reliability 1. F. He and C. M. Tan. “3D simulationbased research on the effect of interconnect structures on circuit reliability,” World Journal of Modelling and Simulation, vol. 8, no. 4, pp. 271284, Nov. 2012. 2. S. Lan, C. M. Tan, and K. Wu. “Reliability study of LED driver  a case study of black box testing,” Microelectronics Reliability, vol. 52, no. 910, pp. 19404, Sep.Oct. 2012. 3. F. He and C. M. Tan. “Effect of IC layout on the reliability of CMOS amplifiers,” Microelectronics Reliability, vol. 52, no. 8, pp. 157580, Aug. 2012. 4. F. He and C. M. Tan. “Comparison of electromigration simulation in test structure and actual circuit,” Applied Mathematical Modelling, vol. 36, no. 10, pp. 49084917, Oct. 2012. 5. F. He and C. M. Tan. “Electromigration reliability of interconnections in RF low noise amplifier circuit,” Microelectronics Reliability, vol. 52, no. 2, pp. 446454, Feb. 2012 6. F. He and C. M. Tan. “Modeling the effect of barrier thickness and lowk dielectric on circuit reliability using 3D model,” Microelectronics Reliability, vol. 50, pp. 13271331, 2010. 7. F. He and C. M. Tan. “Circuit level interconnect reliability study using 3D circuit model,” Microelectronics Reliability, vol. 50, no. 3, pp. 376390, 2010.
1. Cher Ming Tan and Wenzhi Yu, “Damage Threshold Determination and Nondestructive Identification of Possible Failure Sites in PIN Limiter”, Microelectronics Reliability, vol. 54, no. 5, pp. 960964, May 2014. 2. C. M. Tan, S. Yanuar, and T. C. Chai. “Finite element modeling of capacitive coupling voltage contrast,” Microelectronics Reliability, vol. 47, no. 911, pp. 15551560, 2007. 3. C. M. Tan, Z. Gan, and T.C. Chai. “Feasibility study of the application of voltage contrast to printed circuit board,” Microelectronics Reliability, vol. 46, no. 56, pp. 939948, 2006. 4. C. M. Tan, K. P. Lim, T. C. Chai, and J. Lim. “Nondestructive identification of open circuit in wiring on organic substrate with high wiring density covered with solder resist,” Microelectronics Reliability, vol. 45, no. 911, pp. 15721575, 2005. 5. C. M. Tan, K. M. Ang, L. H. Tay, and Y. M. Tan. “Investigation of weightonwheel switch failure in F16 aircraft,” Engineering Failure Analysis, vol. 12, no. 4, pp. 508519, 2005. 6. Z. Gan, C. M. Tan, and G. Zhang. “Nondestructive void size determination in copper metallization under passivation,” IEEE Transactions on Device and Materials Reliability, vol. 3, no. 3, pp. 6978, 2003. 7. C. M. Tan, E. Er, Y. Hua, and V. Chai. “Failure analysis of bond pad metal peeling using FIB and AFM,” IEEE Transactions on Components and Packaging Technologies, vol. 21, no. 4, pp. 585591, 1998.
1. C. M. Tan and N. Raghavan. “Unveiling the electromigration physics of ULSI interconnects through statistics,” Semiconductor Science and Technology, vol. 22, no. 8, pp. 941946, 2007. 2. G. Zhang, C. M. Tan, K. T. Tan, K. Y. Sim, and W. Y. Zhang. “Reliability improvement in Al metallization: a combination of statistical prediction and failure analytical methodology,” Microelectronics Reliability, vol. 44, no. 911, pp. 18431848, 2004. 3. C. M. Tan and K. N. C. Yeo. “A reliability statistics perspective on the pitfalls of standard waferlevel electromigration accelerated test (SWEAT),” Journal of Electronic TestingTheory and Applications, vol. 17, no. 1, pp. 6368, 2001.
1. P. Singh, D. H. Yeh, C. M. Tan, C.S. Lai, C. T. Hou, T. Y. Chao, and L.B. Chang, “Output Properties of Transparent Submount Packaged FlipChip LightEmitting Diode Modules”, Applied Sciences, Vol. 6, no. 179, pp. 18, June 2016. 2. Preetpal Singh & Cher Ming Tan, “Degradation Physics of High Power LEDs in Outdoor Environment and the Role of Phosphor in the degradation process”, Scientific Reports, Vol. 6, no. 24052, pp. 113, April, 2016. 3. Preetpal Singh, Cher Ming Tan, LiannBe Chang, “Early degradation of high power packaged LEDs under humid conditions and its recovery — Myth of reliability rejuvenation”, Microelectronics Reliability, Vol. 61, pp145153, June 2016. 4. Preetpal Singh, Cher Ming Tan, “A review on the humidity reliability of high power white light LEDs,” Microelectronics Reliability, Vol 61, pp129139, June 2016. 5. S. Lan, C.M. Tan*, “Application of particle filter technique for lifetime determination from degradation study on a LED Driver", IEEE Transactions on Device and Materials Reliability, vol. 15, no. 2, pp. 163173, June 2015. 6. Song Lan, Cher Ming Tan, "Degradation Model of a LinearMode LED Driver and its Application in Lifetime Prediction," IEEE Transactions on Device and Materials Reliability, vol.14, no.3, pp.904913, September, 2014. 7. Song Lan, Cher Ming Tan, Kevin Wu, “Methodology of reliability enhancement for high power LED driver”, Microelectronics Reliability, vol. 54, Issues 6–7, pp. 11501159, June–July, 2014. 8. C.M. Tan and P. Singh, “Time Evolution Degradation Physics in High Power White LEDs Under High TemperatureHumidity Conditions”, IEEE Trans. On Devices and Materials Reliability, Vol. 14, no. 2, pp. 742750, June 2014. 9. Cher Ming Tan, Sihan Chen, Jacky Kong, “Effects of carbon loading on the performance of functionalized carbon nanotube polymer heat sink for high power lightemitting diode in switching applications”, IEEE Transactions on Nanotechnology, Vol.12, no.6, pp11041110, Nov. 2013. 10. C. M. Tan and C. S. Lai. “Systematic root cause analysis for GaP green light LED degradation,” IEEE Trans. On Devices and Materials Reliability, Vol. 13, n 1, pp156160, March 2013. 11. S. H. Chen, C. M. Tan, G. H. Tan, and F. He. “Degradation behavior of high power light emitting diode under high frequency switching,” Microelectronics Reliability, vol. 52, no. 910, pp. 21682173, Sep.Oct. 2012. 12. C. M. Tan, S. H. Chen, and E. Chen. “Rapid light output degradation of GaN based packaged LED in the early stage of humidity test,” IEEE Transactions on Device and Materials Reliability, vol. 12, no. 1, pp. 4448, Mar. 2012. 13. S. H. Chen, C. M. Tan, and E. Chen. “Ensuring accuracy in optical and electrical measurement of ultrabright LEDs during reliability test,” Microelectronics Reliability, vol. 52, no. 8, pp. 16325, Aug. 2012. 14. C. M. Tan, B. K. E. Chen, G. Xu, and Y. Liu. “Analysis of humidity effects on the degradation of highpower white LEDs,” Microelectronics Reliability, vol. 49, pp. 12261230, 2009.
1. C. M. Tan. “Identifying key parameters for risk based inspections (RBI),” Hydrocarbon Asia, pp. 6064, 2004. 2. C. M. Tan. “Methodology for customers focus buildin reliability,” International Journal of Quality and Reliability Management, vol. 20, no. 3, pp. 378397, 2003.
1. Feng Leng, Cher Ming Tan, Michael Pecht, “Effect of Temperature on the Aging rate of Li Ion Battery Operating above Room Temperature” Scientific Reports, vol. 5, pp. 12967, Aug. 2015. 2. Zhitao Liu, Cher Ming Tan*, Feng Leng, “A reliability based design concept for lithiumion battery pack in electric vehicles”, Reliability Engineering & System safety, vol. 134, pp. 169–177, February 2015. 3. Feng Leng, Cher Ming Tan*, Rachid Yazami and Minh Duc Le, “A practical framework of electrical based online stateofcharge estimation of lithium ion batteries”, Journal of Power Sources, vol. 255, pp. 423430., June 2014.
1. Shuai Zhang, Cher Ming Tan, Shuguang Cheng, Tianqi Deng, Feifei He and Haibin Su, “Ab initio simulation of electronic and mechanical properties of aluminium for fatigue early feature investigation”, International Journal of Nanotechnology, Vol.11, No.1/2/3/4, pp. 373  385, 2014.
1. Z. Wu, X. Tian, Z. Wang, C. Gong, S. Yang, C. M. Tan, and P. K. Chu. “Microstructure and mechanical properties of CrN films fabricated by high power pulsed magnetron discharge plasma immersion ion implantation and deposition,” Applied Surface Science, vol. 258, no. 1, pp. 2426, 15th Oct. 2011. 2. C. M. Tan, B. K. Chen, and K. P. Toh. “Humidity study of aSi PV cell,” Microelectronics Reliability, vol. 50, pp. 18711874, 2010. 3. Z. Gan, G. Yu, Z. Zhao, C. M. Tan, and B. K. Tay. “Mechanical properties of Zirconia Thin Films deposited by filtered cathodic vacuum arc,” Journal of the American Ceramic Society, vol. 88, no. 8, pp. 22272229, 2005. 4. P. Zhao, E. Rusli, J. H. Xia, C. M. Tan, Y. Liu, C. C. Tin, S. F. Yoon, W. G. Zhu, and J. Ahn. “Study of carbon in thermal oxide formed on 4HSiC by XPS,” Silicon Carbide and Related Materials 2004, Materials Science Forum, vol. 483485, pp. 653656, 2005. 5. Z. Gan, Y. Zhang, G. Yu, C. M. Tan, S. P. Lau, and B. K. Tay. “Intrinsic mechanical properties of diamondlike carbon thin films deposited by filtered cathodic vacuum arc,” Journal of Applied Physics, vol. 95, no. 8, pp. 3509, 2004. 6. Z.L. Yuan, D.H. Zhang, C.Y. Li, K. Prasad, C.M. Tan, “Study of interactions between αTa films and SiO2 under rapid thermal annealing,” Thin Solid Films, v 462463, p 279283, September 2004 7. Z.L. Yuan, D.H. Zhang, C.Y. Li, K. Prasad, C.M. Tan, “Thermal stability of Cu/αTa/SiO2/Si structures”, Thin Solid Films, v 462463, p 284287, September 2004 8. Z. H. Gan, G. Q. Yu, B. K. Tay, C. M. Tan, Z. W. Zhao, and Y. Q. Fu. “Preparation and characterization of copper oxide thin films deposited by filtered cathodic vacuum arc,” Journal of Physics DApplied Physics, vol. 37, no. 1, pp. 8185, 2004. 9. S. Zukotynski, F. Gaspari, N. Kherani, T. Kosteski, K. Law, W. T. Shmayda, C. M. Tan. “Metastability in tritiated amorphous silicon,” Journal of NonCrystalline solids, vol. 299302, Part 1, pp. 476481, 2002. 10. C. M. Tan, S. Zukotynski, and H. Mar. “Effect of Current Density on the Electrochemical Dissolution of Germanium and Zinc Selenide,” Journal of the Electrochemical Society, vol. 137, no. 2, pp. 39703972, 1990. 11. C. M. Tan and S. Zukotynski. “Single Wafer Miniature HallEffect Keyboard,” IEEE Transactions on Industrial Electronics, vol. 36, no. 3, pp. 446450, 1989. Click Num
